Chemically amplified resist composition

ABSTRACT

A chemically amplified resist composition comprising: 
     (A) a salt represented by the formula (I): 
     
       
         
         
             
             
         
       
     
     wherein R 21  represents a C1-C30 hydrocarbon group etc., Q 1  and Q 2  each independently represent a fluorine atom etc., and
 
A +  represents at least one organic cation selected from a cation represented by the formula (Ia):
 
     
       
         
         
             
             
         
       
     
     wherein P 1 , P 2  and P 3  each independently represent a C1-C30 alkyl group etc.,
 
a cation represented by the formula (Ib):
 
     
       
         
         
             
             
         
       
     
     wherein P 4  and P 5  each independently represent a hydrogen atom etc., and a cation represented by the formula (Ic): 
     
       
         
         
             
             
         
       
     
     wherein P 10 , P 11 , P 12 , P 13 , P 14 , P 15 , P 16 , P 17 , P 18 , P 19 , P 20  and P 21  each independently represent a hydrogen atom etc., B represents a sulfur or oxygen atom and m represents 0 or 1,
 
(B) a salt represented by the formula (II):
 
       A′ +− E   (II) 
     wherein A′ +  represents at least one organic cation selected from cations represented by the above-mentioned formulae (Ia), (Ib) and (Ic), and E −  represents at least one organic anion selected from an anion represented by the formula (II-1): 
         − O 3 SQ 3    (II-1) 
     wherein Q 3  represents a C1-C10 perfluoroalkyl group, and an anion represented by the formula (II-2): 
     
       
         
         
             
             
         
       
     
     wherein Q 4  represents a C1-C10 perfluoroalkyl group, and
 
(C) a resin which contains a structural unit having an acid-labile group and which itself is insoluble or poorly soluble in an aqueous alkali solution but becomes soluble in an aqueous alkali solution by the action of an acid.

This nonprovisional application claims priority under 35 U.S.C. §119(a)on Patent Application No. 2007-074369 filed in JAPAN on Mar. 22, 2007,the entire contents of which are hereby incorporated by reference.

FIELD OF THE INVENTION

The present invention relates to a chemically amplified resistcomposition.

BACKGROUND OF THE INVENTION

A chemically amplified resist composition used for semiconductormicrofabrication employing a lithography process contains a resin whichcontains a structural unit having an acid-labile group and which itselfis insoluble or poorly soluble in an alkali aqueous solution but becomessoluble in an alkali aqueous solution by the action of an acid, and anacid generator comprising a compound generating an acid by irradiation.

In semiconductor microfabrication, it is desirable to form patternshaving high resolution and good line edge roughness, and it is expectedfor a chemically amplified resist composition to give such patterns.

US 2006-0194982 A1 discloses a chemically amplified resist compositioncontaining the salt represented by the following formula:

wherein E represents a hydrogen atom or a hydroxyl group, and a resinwhich contains a structural unit having an acid-labile group and whichitself is insoluble or poorly soluble in an alkali aqueous solution butbecomes soluble in an alkali aqueous solution by the action of an acid.

US 2003/0194639 A1 discloses a chemically amplified resist compositioncontaining the salt represented by the following formula:

as the acid generator.

US 2003/0194639 A1 also discloses a chemically amplified resistcomposition containing the salt represented by the following formula:

as the acid generator.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a chemically amplifiedresist composition.

This and other objects of the present invention will be apparent fromthe following description.

The present invention relates to the followings:

<1> A chemically amplified resist composition comprising:(A) a salt represented by the formula (I):

wherein R²¹ represents a C1-C30 hydrocarbon group which may besubstituted, and at least one —CH₂— in the hydrocarbon group may besubstituted by —CO— or —O—, Q¹ and Q² each independently represent afluorine atom or a C1-C6 perfluoroalkyl group, andA⁺ represents at least one organic cation selected from a cationrepresented by the formula (Ia):

wherein P¹, P² and P³ each independently represent a C1-C30 alkyl groupwhich may be substituted with at least one selected from a hydroxylgroup, a C3-C12 cyclic hydrocarbon group and a C1-C12 alkoxy group, or aC3-C30 cyclic hydrocarbon group which may be substituted with at leastone selected from a hydroxyl group and a C1-C12 alkoxy group, a cationrepresented by the formula (Ib):

wherein P⁴ and P⁵ each independently represent a hydrogen atom, ahydroxyl group, a C1-C12 alkyl group or a C1-C12 alkoxy group, and acation represented by the formula (Ic):

wherein P¹⁰, P¹¹, P¹², P¹³, P¹⁴, P¹⁵, P¹⁶, P¹⁷, P¹⁸, P¹⁹, P²⁰ and P²¹each independently represent a hydrogen atom, a hydroxyl group, a C1-C12alkyl group or a C1-C12 alkoxy group, B represents a sulfur or oxygenatom and m represents 0 or 1,(B) a salt represented by the formula (II):

A′⁺⁻E  (II)

wherein A′⁺ represents at least one organic cation selected from cationsrepresented by the above-mentioned formulae (Ia), (Ib) and (Ic), and E⁻represents at least one organic anion selected from an anion representedby the formula (II-1):

⁻O₃SQ³  (II-1)

wherein Q³ represents a C1-C10 perfluoroalkyl group, andan anion represented by the formula (II-2):

wherein Q⁴ represents a C1-C10 perfluoroalkyl group, and(C) a resin which contains a structural unit having an acid-labile groupand which itself is insoluble or poorly soluble in an aqueous alkalisolution but becomes soluble in an aqueous alkali solution by the actionof an acid;<2> The chemically amplified resist composition according to <1>,wherein Q¹ and Q² each independently represent a fluorine atom or atrifluoromethyl group;<3> The chemically amplified resist composition according to <1>,wherein Q¹ and Q² represent fluorine atoms;<4> The chemically amplified resist composition according to any one of<1> to <3>, wherein Q³ represents a trifluoromethyl group, apentafluoroethyl group, or a nonafluorobutyl group;<5> The chemically amplified resist composition according to any one of<1> to <3>, wherein Q⁴ represents a trifluoromethyl group or apentafluoroethyl group;<6> The chemically amplified resist composition according to any one of<1> to <4>, wherein E⁻ is an anion represented by the formula (II-1);<7> The chemically amplified resist composition according to any one of<1> to <6>, wherein A⁺ and A′⁺ are the same or different, and eachindependently represents a cation represented by the formula (Id), (Ie)or (If):

wherein P²⁸, P²⁹ and P³⁰ each independently represent a C1-C20 alkylgroup or a C3-C30 cyclic hydrocarbon group except a phenyl group, and atleast one hydrogen atom in the C1-C20 alkyl group may be substitutedwith a hydroxyl group, a C1-C12 alkoxy group or a C3-C12 cyclichydrocarbon group and at least one hydrogen atom in the C3-C30 cyclichydrocarbon group may be substituted with a hydroxyl group, a C1-C12alkyl group or a C1-C12 alkoxy group, andP³¹, P³², P³³, P³⁴, P³⁵ and P³⁶ each independently represent a hydroxylgroup, a C1-C12 alkyl group, a C1-C12 alkoxy group or a C3-C12 cyclichydrocarbon group, and l, k, j, i, h and g each independently representan integer of 0 to 5;<8> The chemically amplified resist composition according to any one of<1> to <6>, wherein A⁺ and A′⁺ are the same or different, and eachindependently represents a cation represented by the formula (Ig):

wherein P⁴¹, P⁴² and P⁴³ each independently represent a hydrogen atom, ahydroxyl group, a C1-C12 alkyl group or a C1-C12 alkoxy group;<9> The chemically amplified resist composition according to any one of<1> to <6>, wherein A⁺ and A′⁺ are the same or different, and eachindependently represents a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group;<10> The chemically amplified resist composition according to any one of<1> to <9>, wherein R²¹ represents a group represented by the formula:

wherein Z¹ represents a single bond or —(CH₂)_(f)—, f represents aninteger of 1 to 4, Y¹ represents —CH₂—, —CO— or —CH(OH)—; ring X¹represents a C3-C30 monocyclic or polycyclic hydrocarbon group in whicha hydrogen atom is substituted with a hydroxyl group at Y¹ position whenY¹ is —CH(OH)— or in which two hydrogen atoms are substituted with ═O atY¹ position when Y¹ is —CO—, and at least one hydrogen atom in theC3-C30 monocyclic or polycyclic hydrocarbon group may be substitutedwith a C1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C4 perfluoroalkylgroup, a C1-C6 hydroxyalkyl group, a hydroxyl group or a cyano group;<11> The chemically amplified resist composition according to <10>,wherein the group represented by the formula:

is a group represented by the formula (l), (m) or (n):

<12> The chemically amplified resist composition according to any one of<1> to <6>, wherein A⁺ is a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group, and R²¹ represents a group represented by theformula:

wherein Z¹ represents a single bond or —(CH₂)_(f)—, f represents aninteger of 1 to 4, Y¹ represents —CH₂—, —CO— or —CH(OH)—; ring X¹represents a C3-C30 monocyclic or polycyclic hydrocarbon group in whicha hydrogen atom is substituted with a hydroxyl group at Y¹ position whenY¹ is —CH(OH)— or in which two hydrogen atoms are substituted with ═O atY¹ position when Y is —CO—, and at least one hydrogen atom in the C3-C30monocyclic or polycyclic hydrocarbon group may be substituted with aC1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C4 perfluoroalkyl group, aC1-C6 hydroxyalkyl group, a hydroxyl group or a cyano group;<13> The chemically amplified resist composition according to <12>,wherein the group represented by the formula:

is a group represented by the formula (l), (m) or (n):

<14> The chemically amplified resist composition according to any one of<1> to <4>, wherein A′⁺ is a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group, and E⁻ is an anion represented by the formula(II-1):

⁻O₃SQ³  (II-1)

wherein Q³ represents a C1-C10 perfluoroalkyl group;<15> The chemically amplified resist composition according to any one of<1> to <4>, wherein A⁺ and A′⁺ are same or different, and eachindependently represents a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group,R²¹ represents a group represented by the formula:

wherein Z¹ represents a single bond or —(CH₂)_(f)—, f represents aninteger of 1 to 4, Y¹ represents —CH₂—, —CO— or —CH(OH)—; ring X¹represents a C3-C30 monocyclic or polycyclic hydrocarbon group in whicha hydrogen atom is substituted with a hydroxyl group at Y¹ position whenY¹ is —CH(OH)— or in which two hydrogen atoms are substituted with ═O atY¹ position when Y is —CO—, and at least one hydrogen atom in the C3-C30monocyclic or polycyclic hydrocarbon group may be substituted with aC1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C4 perfluoroalkyl group, aC1-C6 hydroxyalkyl group, a hydroxyl group or a cyano group, and E⁻ isan anion represented by the formula (II-1):

⁻O₃SQ³  (II-1)

wherein Q³ represents a C1-C10 perfluoroalkyl group;<16> The chemically amplified resist composition according to any one of<1> to <15>, wherein the amount ratio of the salt represented by theformula (I) and the salt represented by the formula (II) is 9/1 to 1/9;<17> The chemically amplified resist composition according to any one of<1> to <16>, wherein the resin contains a structural unit derived from amonomer having a bulky and acid-labile group;<18> The resist composition according to <18>, the bulky and acid-labilegroup is a 2-alkyl-2-adamantyl ester group or a1-(1-adamantyl)-1-alkylalkyl ester group;<19> The resist composition according to <18>, the monomer having abulky and acid-labile group is 2-alkyl-2-adamantyl acrylate,2-alkyl-2-adamantyl methacrylate, 1-(1-adamantyl)-1-alkylalkyl acrylate,1-(1-adamantyl)-1-alkylalkyl methacrylate, 2-alkyl-2-adamantyl5-norbornene-2-carboxylate, 1-(1-adamantyl)-1-alkylalkyl5-norbornene-2-carboxylate, 2-alkyl-2-adamantyl α-chloroacrylate or1-(1-adamantyl)-1-alkylalkyl α-chloroacrylate;<20> The resist composition according to any one of <1> to <19>, whereinthe resist composition further comprises a basic compound.

DESCRIPTION OF PREFERRED EMBODIMENTS

In the salt represented by the formula (I) (hereinafter, simply referredto as Salt (I)), R²¹ represents a C1-C30 hydrocarbon group which may besubstituted, and at least one —CH₂— in the hydrocarbon group may besubstituted by —CO— or —O—.

The C1-C30 hydrocarbon group may be a linear or branched chainhydrocarbon group. The C1-C30 hydrocarbon group may have a monocyclic orpolycyclic structure, and may have an aromatic group or groups. TheC1-C30 hydrocarbon group may have a carbon-carbon double bond or bonds.

It is preferred that the C1-C30 hydrocarbon group has at least onecyclic structure, and it is more preferred that the C1-C30 hydrocarbongroup has a cyclic structure. Examples of the cyclic structure include acyclopropane, cyclohexane, cyclooctane, norbornane, adamantane,cyclohexene, benzene, naphthalene, anthracene, phenanthrene and fluorenestructure.

Examples of the substituent include a C1-C6 alkyl group, a C1-C6 alkoxygroup, a C1-C4 perfluoroalkyl group, a C1-C6 hydroxyalkyl group, ahydroxyl group or a cyano group, and the hydroxyl group is preferable asthe substituent.

Examples of the C1-C6 alkyl group include a methyl, ethyl, n-propyl,isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl andn-hezyl group. Examples of the C1-C6 alkoxy group include a methoxy,ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy, sec-butoxy,tert-butoxy, n-pentyloxy and n-hexyloxy group. Examples of the C1-C4perfluoroalkyl group include a trifluoromethyl, pentafluoroethyl,heptafluoropropyl and nonafluorobutyl group. Examples of the C1-C6hydroxyalkyl group include a hydroxymethyl, 2-hydroxyethyl,3-hydroxypropyl, 4-hydroxybutyl and 6-hydroxyhexyl group.

Q¹ and Q² each independently represent a fluorine atom or a C1-C6perfluoroalkyl group. Examples of the C1-C6 perfluoroalkyl group includea trifluoromethyl, pentafluoroethyl, heptafluoropropyl, nonafluorobutylundecafluoropentyl and tridecafluorohexyl group, and the trifluoromethylgroup is preferable.

It is preferable that Q¹ and Q² each independently represent thefluorine atom or the trifluoromethyl group, and it is more preferablethat Q¹ and Q² represent the fluorine atoms.

Specific examples of the anion part of Salt (I) include the followings.

It is preferred that R²¹ represents a group represented by the formula:

wherein Z¹ represents a single bond or —(CH₂)_(f)—, f represents aninteger of 1 to 4, Y¹ represents —CH₂—, —CO— or —CH(OH)—; ring X¹represents a C3-C30 monocyclic or polycyclic hydrocarbon group in whicha hydrogen atom is substituted with a hydroxyl group at Y¹ position whenY¹ is —CH(OH)— or in which two hydrogen atoms are substituted with ═O atY¹ position when Y¹ is —CO—, and at least one hydrogen atom in theC3-C30 monocyclic or polycyclic hydrocarbon group may be substitutedwith a C1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C4 perfluoroalkylgroup, a C1-C6 hydroxyalkyl group, a hydroxyl group or a cyano group.

Examples of the C1-C6 alkyl group include a methyl, ethyl, n-propyl,isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl andn-hezyl group. Examples of the C1-C6 alkoxy group include a methoxy,ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy, sec-butoxy,tert-butoxy, n-pentyloxy and n-hexyloxy group. Examples of the C1-C4perfluoroalkyl group include a trifluoromethyl, pentafluoroethyl,heptafluoropropyl and nonafluorobutyl group. Examples of the C1-C6hydroxyalkyl group include a hydroxymethyl, 2-hydroxyethyl,3-hydroxypropyl, 4-hydroxybutyl and 6-hydroxyhexyl group.

Examples of the ring X¹ include a C4-C8 cycloalkyl group such as acyclobutyl, cyclopentyl, cyclohexyl and cyclooctyl group, an adamantylgroup, and a norbornyl group, in which a hydrogen atom may besubstituted with a hydroxyl group or in which two hydrogen atoms may besubstituted with ═O, and in which at least one hydrogen atom may besubstituted with the C1-C6 alkyl group, the C1-C6 alkoxy group, theC1-C4 perfluoroalkyl group, the C1-C6 hydroxyalkyl group, the hydroxylgroup or the cyano group.

Specific examples of the ring X¹ include a 2-oxocyclopentyl group, a2-oxocyclohexyl group, a 3-oxocyclopentyl group, a 3-oxocyclohexylgroup, a 4-oxocyclohexyl group, a 2-hydroxycyclopentyl group, a2-hydroxycyclohexyl group, a 3-hydroxycyclopentyl group, a3-hydroxycyclohexyl group, a 4-hydroxycyclohexyl group, a4-oxo-2-adamantyl group, a 3-hydroxy-1-adamantyl group, a4-hydroxy-1-adamantyl group, a 5-oxonorbornan-2-yl group, a1,7,7-trimethyl-2-oxonorbornan-2-yl group, a3,6,6-trimethyl-2-oxo-bicyclo[3.1.1]heptan-3-yl group, a2-hydroxy-norbornan-3-yl group, a1,7,7-trimethyl-2-hydroxynorbornan-3-yl group, a3,6,6-trimethyl-2-hydroxybicyclo[3.1.1]heptan-3-yl group,

and the like (in the formulae above, straight line with an open endshows a bond which is extended from an adjacent group).

As the ring X¹, the adamantane ring is preferable. The group representedby the following formulae (l), (m) or (n):

is preferable as R²¹. In the above formulae (l), (m) and (n) straightline with an open end shows a bond which is extended from an adjacentgroup.

A⁺ represents at least one organic cation selected from a cationrepresented by the formula (Ia):

wherein P¹, P² and P³ each independently represent a C1-C30 alkyl groupwhich may be substituted with at least one selected from a hydroxylgroup, a C3-C12 cyclic hydrocarbon group and a C1-C12 alkoxy group, or aC3-C30 cyclic hydrocarbon group which may be substituted with at leastone selected from a hydroxyl group and a C1-C12 alkoxy group(hereinafter, simply referred to as the cation (Ia)),a cation represented by the formula (Ib):

wherein P⁴ and P⁵ each independently represent a hydrogen atom, ahydroxyl group, a C1-C12 alkyl group or a C1-C12 alkoxy group(hereinafter, simply referred to as the cation (Ib)), anda cation represented by the formula (Ic):

wherein P¹⁰, P¹¹, P¹², P¹³, P¹⁴, P¹⁵, P¹⁶, P¹⁷, P¹⁸, P¹⁹, P²⁰ and P²¹each independently represent a hydrogen atom, a hydroxyl group, a C1-C12alkyl group or a C1-C12 alkoxy group, B represents a sulfur or oxygenatom and m represents 0 or 1 (hereinafter, simply referred to as thecation (Ic)).

Examples of the C1-C12 alkoxy group in the cations (Ia), (Ib) and (Ic)include a methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy,sec-butoxy, tert-butoxy, n-pentyloxy, n-hexyloxy, n-octyloxy and2-ethylhexyloxy group.

Examples of the C3-C12 cyclic hydrocarbon group in the cation (Ia)include a cyclopentyl, cyclohexyl, 1-adamantyl, 2-adamantyl, phenyl,2-methylphenyl, 4-methylphenyl, 1-naphthyl and 2-naphthyl group.

Examples of the C1-C30 alkyl group which may be substituted with atleast one selected from the hydroxyl group, the C3-C12 cyclichydrocarbon group and the C1-C12 alkoxy group in the cation (Ia) includea methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl,tert-butyl, n-pentyl, n-hexyl, n-octyl, 2-ethylhexyl and benzyl group.

Examples of the C3-C30 cyclic hydrocarbon group which may be substitutedwith at least one selected from the hydroxyl group and the C1-C12 alkoxygroup in the cation (Ia) include a cyclopentyl, cyclohexyl, 1-adamantyl,2-adamantyl, bicyclohexyl, phenyl, 2-methylphenyl, 4-methylphenyl,4-ethylphenyl, 4-isopropylphenyl, 4-tert-butylphenyl,2,4-dimethylphenyl, 2,4,6-trimethylphenyl, 4-n-hexylphenyl,4-n-octylphenyl, 1-naphthyl, 2-naphthyl, fluorenyl, 4-phenylphenyl,4-hydroxyphenyl, 4-methoxyphenyl, 4-tert-butoxyphenyl,4-n-hexyloxyphenyl group.

Examples of the C1-C12 alkyl group in the cations (Ib) and (Ic) includea methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl,tert-butyl, n-pentyl, n-hexyl, n-octyl and 2-ethylhexyl group.

Examples of the cation (Ia) include the followings:

Examples of the cation (Ib) include the followings:

Examples of the cation (Ic) include the followings:

As the organic cation represented by A⁺, the cation (Ia) is preferable.

As the organic cation represented by A⁺, cations represented by thefollowing formulae (Id), (Ie) and (If):

wherein P²⁸, P²⁹ and P³⁰ each independently represent a C1-C20 alkylgroup or a C3-C30 cyclic hydrocarbon group except a phenyl group, and atleast one hydrogen atom in the C1-C20 alkyl group may be substitutedwith a hydroxyl group, a C1-C12 alkoxy group or a C3-C12 cyclichydrocarbon group and at least one hydrogen atom in the C3-C30 cyclichydrocarbon group may be substituted with a hydroxyl group, a C1-C12alkyl group or a C1-C12 alkoxy group, and P³¹, P³², P³³, P³⁴, P³⁵ andP³⁶ each independently represent a hydroxyl group, a C1-C12 alkyl group,a C1-C12 alkoxy group or a C3-C12 cyclic hydrocarbon group, and l, k, j,i, h and g each independently represent an integer of 0 to 5, are alsopreferable.

Examples of the C1-C20 alkyl group include a methyl, ethyl, n-propyl,isopropyl, n-butyl, tert-butyl, n-hexyl, n-octyl, n-decyl and n-icosylgroup.

Examples of the C1-C12 alkoxy group and the C3-C30 cyclic hydrocarbongroup include the same groups as mentioned above.

As the organic cation represented by A⁺, a cation represented by theformula (Ig):

wherein P⁴¹, P⁴² and P⁴³ each independently represent a hydrogen atom, ahydroxyl group, a C1-C12 alkyl group or a C1-C12 alkoxy group, is morepreferable, and a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group, is especially preferable in viewpoint ofproduction.

Examples of the alkyl group and the alkoxy group include the same groupsas mentioned above.

As Salt (I), the salt represented by the following formula:

wherein A⁺, Q¹, Q², X¹, Y¹ and Z¹ are the same as defined above, ispreferable, and the salt represented by the following formula:

wherein P²², P²³, P²⁴, Q¹, Q², X¹, Y¹ and Z¹ are the same as definedabove, is more preferable, and the salts represented by the followingformulae:

wherein P²², P²³, P²⁴, Q¹ and Q² are the same as defined above, areespecially preferable.

In the salt represented by the formula (II) (hereinafter, simplyreferred to as Salt (II)), A′⁺ represents at least one organic cationselected from cations represented by the above-mentioned formulae (Ia),(Ib) and (Ic).

As the organic cation represented by A′⁺, the cation (Ia) is preferable.As the organic cation represented by A′⁺, cations represented by theabove-mentioned formula (Id), (Ie) or (If) is also preferable.

As the organic cation represented by A′⁺, a cation represented by theabove-mentioned formula (Ig) is more preferable, and a cationrepresented by the above-mentioned formula (Ih) is especially preferablein viewpoint of production.

E⁻ represents at least one organic anion selected from an anionrepresented by the formula (II-1):

⁻O₃SQ³  (II-1)

and an anion represented by the formula (II-2):

and the anion represented by the formula (II-1) is preferable.

Q³ represents a C1-C10 perfluoroalkyl group, and the C1-C8perfluoroalkyl alkyl group is preferable. Examples of the C1-C10perfluoroalkyl group include a trifluoromethyl, pentafluoroethyl,heptafluoropropyl, nonafluorobutyl, tetradecafluorohexyl,heptadecafluorooctyl, perfluorocyclohexyl andperfluoro-4-ethylcyclohexyl group.

Specific examples of the anion represented by the formula (II-1) includethe followings.

In the viewpoint of line edge roughness, it is preferred that Q³ is thetrifluoromethyl, pentafluoroethyl or nonafluorobutyl group.

Q⁴ represents a C1-C10 perfluoroalkyl group, and the C1-C8perfluoroalkyl alkyl group is preferable. Examples of thereof includethe same as described as Q³.

Specific examples of the anion represented by the formula (II-2) includethe followings.

In the viewpoint of line edge roughness, it is preferred that Q⁴ is thetrifluoromethyl or pentafluoroethyl group.

As Salt (II), a salt represented by the following formula:

is especially preferable.

Salt (I) can be produced by a process comprising reacting a salt of theformula (LI):

wherein M represents Li, Na, K or Ag, and Q¹, Q² and R²¹ are the samemeanings as defined above (hereinafter, simply referred to as the salt(LI)), with a compound of the formula (XI):

A⁺⁻G  (XI)

wherein A⁺ is the same meaning as defined above, and G represents F, Cl,Br, I, BF₄, AsF₆, SbF₆, PF₆ or ClO₄ (hereinafter, simply referred to asthe compound (XI)).

The reaction of the salt (LI) and the compound (XI) is usually conductedin an inert solvent such as acetonitrile, water, methanol anddichloromethane, at a temperature of about 0 to 150° C., preferably of 0to 100° C., with stirring.

The amount of the compound (XI) is usually 0.5 to 2 moles per 1 mole ofthe salt (LI). Salt (I) obtained by the process above can be isolated byrecrystallization, and can be purified by washing with water.

The salt (LI) used for the production of Salt (I) can be produced by aprocess comprising esterifying an alcohol compound represented by theformula (LII):

HO—R²¹  (LII)

wherein R²¹ is the same meaning as defined above (hereinafter, simplyreferred to as the alcohol compound (LII)), with a carboxylic acidrepresented by the formula (IX):

wherein M, Q¹ and Q² are the same meanings as defined above(hereinafter, simply referred to as the carboxylic acid (IX)).

The esterification reaction of the alcohol compound (LII) and thecarboxylic acid (IX) can generally be carried out by mixing materials inan aprotic solvent such as dichloroethane, toluene, ethylbenzene,monochlorobenzene, acetonitrile and N,N-dimethylformamide, at 20 to 200°C., preferably 50 to 150° C. In the esterification reaction, an acidcatalyst or a dehydrating agent is usually added, and examples of theacid catalyst include organic acids such as p-toluenesulfonic acid, andinorganic acids such as sulfuric acid. Examples of the dehydrating agentinclude 1,1′-carbonyldiimidazole and N,N′-dicyclohexylcarbodiimide.

The esterification reaction may preferably be conducted with dehydrationsince the reaction time tends to be shortened. Examples of thedehydration method include Dean and Stark method.

The amount of the carboxylic acid (IX) is usually 0.2 to 3 moles,preferably 0.5 to 2 moles per 1 mole of the alcohol compound (LII).

The amount of the acid catalyst may be catalytic amount or the amountequivalent to solvent, and is usually 0.001 to 5 moles per 1 mole of thealcohol compound (LII). The amount of the dehydrating agent is usually0.2 to 5 moles, preferably 0.5 to 3 moles per 1 mole of the alcoholcompound (LII).

The carboxylic acid (IX) can be produced, for example, by a processcomprising reacting an ester compound represented by the followingformula:

wherein Q¹ and Q² are the same meanings as defined above, and R³⁰represents a C1-C6 alkyl group, with a compound represented by thefollowing formula:

M-OH

wherein M is the same meaning as defined above, in water.

Salt (II) can be produced by a process comprising reacting a salt of theformula (LIII):

M′⁺⁻E  (LIII)

wherein M′ represents Li, Na, K or Ag, and E⁻ is the same meanings asdefined above (hereinafter, simply referred to as the salt (LIII)), witha compound of the formula (XII):

A′⁺⁻G′  (XII)

wherein A′⁺ is the same meaning as defined above, and G′ represents F,Cl, Br, I, BF₄, AsF₆, SbF₆, PF₆ or ClO₄ (hereinafter, simply referred toas the compound (XII)).

The reaction of the salt (LIII) and the compound (XII) is usuallyconducted in an inert solvent such as acetonitrile, water, methanol anddichloromethane, at a temperature of about 0 to 150° C., preferably of 0to 100° C., with stirring.

The amount of the compound (XII) is usually 0.5 to 2 moles per 1 mole ofthe salt (LIII). Salt (II) obtained by the process above can be isolatedby recrystallization, and can be purified by washing with water.

The present resist composition comprises (A) Salt (I), (B) Salt (II) and(C) a resin which contains a structural unit having an acid-labile groupand which itself is insoluble or poorly soluble in an aqueous alkalisolution but becomes soluble in an aqueous alkali solution by the actionof an acid.

Salt (I) and Salt (II) are usually used as an acid generator, and theacid generated by irradiation to Salt (I) and Salt (II) catalyticallyacts against acid-labile groups in the resin, cleaves acid-labilegroups, and the resin becomes soluble in an alkali aqueous solution.

In the present resist composition, A⁺ of the Salt (I) and A′⁺ of theSalt (II) may be same and may be different each other. It is preferredthat A⁺ of the Salt (I) and A′⁺ of the Salt (II) are same.

The resin used for the present composition contains a structural unithaving the acid-labile group and it itself is insoluble or poorlysoluble in an alkali aqueous solution, but the acid-labile group cleaveby an acid.

In this specification, “an acid-labile group” means a group capable toeliminate by the action of an acid.

In the present specification, “—COOR” may be described as “a structurehaving ester of carboxylic acid”, and may also be abbreviated as “estergroup”. Specifically, “—COOC(CH₃)₃” may be described as “a structurehaving tert-butyl ester of carboxylic acid”, or be abbreviated as“tert-butyl ester group”.

Examples of the acid-labile group include a structure having ester ofcarboxylic acid such as alkyl ester group in which a carbon atomadjacent to the oxygen atom is quaternary carbon atom, alicyclic estergroup in which a carbon atom adjacent to the oxygen atom is quaternarycarbon atom, and a lactone ester group in which a carbon atom adjacentto the oxygen atom is quaternary carbon atom. The “quaternary carbonatom” means a “carbon atom joined to four substituents other thanhydrogen atom”. As the acid-labile group, a group having a quaternarycarbon atom joined to three carbon atoms and an —OR′, wherein R′represents an alkyl group, is exemplified.

Examples of the acid-labile group include an alkyl ester group in whicha carbon atom adjacent to the oxygen atom is quaternary carbon atom suchas a tert-butyl ester group; an acetal type ester group such as amethoxymethyl ester, ethoxymethyl ester, 1-ethoxyethyl ester,1-isobutoxyethyl ester, 1-isopropoxyethyl ester, 1-ethoxypropoxy ester,1-(2-methoxyethoxy)ethyl ester, 1-(2-acetoxyethoxy)ethyl ester,1-[2-(1-adamantyloxy)ethoxy]ethyl ester,1-[2-(1-adamantanecarbonyloxy)ethoxy]ethyl ester, tetrahydro-2-furylester and tetrahydro-2-pyranyl ester group; an alicyclic ester group inwhich a carbon atom adjacent to the oxygen atom is quaternary carbonatom, such as an isobornyl ester, 1-alkylcycloalkyl ester,2-alkyl-2-adamantyl ester and 1-(1-adamantyl)-1-alkylalkyl ester group.At least one hydrogen atom in the adamantyl group may be substitutedwith a hydroxyl group.

Examples of the structural unit include a structure unit derived from anester of acrylic acid, a structural unit derived from an ester ofmethacrylic acid, a structural unit derived from an ester ofnorbornenecarboxylic acid, a structural unit derived from an ester oftricyclodecenecarboxylic acid and a structural unit derived from anester of tetracyclodecenecarboxylic acid. The structure units derivedfrom the ester of acrylic acid and from the ester of methacrylic acidare preferable.

The resin used for the present composition can be obtained by conductingpolymerization reaction of a monomer or monomers having the acid-labilegroup and an olefinic double bond.

Among the monomers, those having a bulky and acid-labile group such asan alicyclic ester group (e.g. a 2-alkyl-2-adamantyl ester and1-(1-adamantyl)-1-alkylalkyl ester group) are preferable, sinceexcellent resolution is obtained when the resin obtained is used in thepresent composition.

Examples of such monomer containing the bulky and acid-labile groupinclude a 2-alkyl-2-adamantyl acrylate, a 2-alkyl-2-adamantylmethacrylate, 1-(1-adamantyl)-1-alkylalkyl acrylate, a1-(1-adamantyl)-1-alkylalkyl methacrylate, a 2-alkyl-2-adamantyl5-norbornene-2-carboxylate, a 1-(1-adamantyl)-1-alkylalkyl5-norbornene-2-carboxylate, a 2-alkyl-2-adamantyl α-chloroacrylate and a1-(1-adamantyl)-1-alkylalkyl α-chloroacrylate.

Particularly when the 2-alkyl-2-adamantyl acrylate, the2-alkyl-2-adamantyl methacrylate or the 2-alkyl-2-adamantylα-chloroacrylate is used as the monomer for the resin component in thepresent composition, a resist composition having excellent resolutiontend to be obtained. Typical examples thereof include2-methyl-2-adamantyl acrylate, 2-methyl-2-adamantyl methacrylate,2-ethyl-2-adamantyl acrylate, 2-ethyl-2-adamantyl methacrylate,2-n-butyl-2-adamantyl acrylate, 2-methyl-2-adamantyl α-chloroacrylateand 2-ethyl-2-adamantyl α-chloroacrylate. When particularly2-ethyl-2-adamantyl acrylate, 2-ethyl-2-adamantyl methacrylate,2-isopropyl-2-adamantyl acrylate or 2-isopropyl-2-adamantyl methacrylateis used for the present composition, a resist composition havingexcellent sensitivity and heat resistance tends to be obtained. In thepresent invention, two or more kinds of monomers having a group orgroups dissociated by the action of the acid may be used together, ifnecessary.

The 2-alkyl-2-adamantyl acrylate can be usually produced by reacting a2-alkyl-2-adamantanol or a metal salt thereof with an acrylic halide,and the 2-alkyl-2-adamantyl methacrylate can be usually produced byreacting a 2-alkyl-2-adamantanol or a metal salt thereof with amethacrylic halide.

The resin used for the present composition can also contain otherstructural unit or units derived from an acid-stable monomer in additionto the above-mentioned structural units having the acid-labile group.Herein, the “structural unit derived from an acid-stable monomer” means“a structural unit not dissociated by an acid generated from Salt (I)and Salt (II)”.

Examples of such other structural unit derived from the acid-stablemonomer include a structural unit derived from a monomer having a freecarboxyl group such as acrylic acid and methacrylic acid; a structuralunit derived from an aliphatic unsaturated dicarboxylic anhydride suchas maleic anhydride and itaconic anhydride; a structural unit derivedfrom 2-norbornene; a structural unit derived from acrylonitrile ormethacrylonitrile; a structural unit derived from an alkyl acrylate oran alkyl methacrylate in which a carbon atom adjacent to oxygen atom issecondary or tertiary carbon atom; a structural unit derived from1-adamantyl acrylate or 1-adamantyl methacrylate; a structural unitderived from styrene monomer such as p-hydroxystyrene andm-hydroxystyrene; a structural unit derived fromacryloyloxy-γ-butyrolactone or methacryloyloxy-γ-butyrolactone having alactone ring which may be substituted with an alkyl group; and the like.Herein, the 1-adamantyloxycarbonyl group is the acid-stable group thoughthe carbon atom adjacent to oxygen atom is the quaternary carbon atom,and the 1-adamantyloxycarbonyl group may be substituted with at leastone hydroxyl group.

Specific examples of the structural unit derived from the acid-stablemonomer include a structural unit derived from 3-hydroxy-1-adamantylacrylate;

a structural unit derived from 3-hydroxy-1-adamantyl methacrylate;a structural unit derived from 3,5-dihydroxy-1-adamantyl acrylate;a structural unit derived from 3,5-dihydroxy-1-adamantyl methacrylate;a structural unit derived from α-acryloyloxy-γ-butyrolactone;a structural unit derived from α-methacryloyloxy-γ-butyrolactone;a structural unit derived from β-acryloyloxy-γ-butyrolactone;a structural unit derived from β-methacryloyloxy-γ-butyrolactone;a structural unit represented by the formula (1):

wherein R¹ represents a hydrogen atom or a methyl group, R³ represents amethyl group, a trifluoromethyl group or a halogen atom, e represents aninteger of 0 to 3, and when e represents 2 or 3, R³s may be the same ordifferent each other;a structural unit represented by the formula (2):

wherein R² represents a hydrogen atom or a methyl group, R⁴ represents amethyl group, a trifluoromethyl group or a halogen atom, d represents aninteger of 0 to 3, and when d represents 2 or 3, R⁴s may be the same ordifferent each other;a structural unit derived from p-hydroxystyrene;a structural unit derived from m-hydroxystyrene;a structural unit derived from an alicyclic compound having an olefinicdouble bond such as a structural unit represented by the formula (3):

wherein R⁵ and R⁶ each independently represents a hydrogen atom, a C1-C3alkyl group, a C1-C3 hydroxyalkyl group, a carboxyl group, a cyanogroup, a hydroxyl group or a —COOU group in which U represents analcohol residue, or R⁵ and R⁶ can be bonded together to form acarboxylic anhydride residue represented by —C(═O)OC(═O)—;a structural unit derived from an aliphatic unsaturated dicarboxylicanhydride such as a structural unit represented by the formula (4):

a structural unit represented by the formula (5):

and the like.

Particularly, the resin having further at least one structural unitselected from the structural unit derived from p-hydroxystyrene, thestructural unit derived from m-hydroxystyrene, the structural unitderived from 3-hydroxy-1-adamantyl acrylate, the structural unit derivedfrom 3-hydroxy-1-adamantyl methacrylate, the structural unit derivedfrom 3,5-dihydroxy-1-adamantyl acrylate, the structural unit derivedfrom 3,5-dihydroxy-1-adamantyl methacrylate, the structural unitrepresented by the formula (1) and the structural unit represented bythe formula (2) in addition to the structural unit having theacid-labile group is preferable from the standpoint of the adhesivenessof resist to a substrate and resolution of resist.

3-Hydroxy-1-adamantyl acrylate, 3-hydroxy-1-adamantyl methacrylate,3,5-dihydroxy-1-adamantyl acrylate and 3,5-dihydroxy-1-adamantylmethacrylate can be produced, for example, by reacting correspondinghydroxyadamantane with acrylic acid, methacrylic acid or its acidhalide, and they are also commercially available.

Further, the acryloyloxy-γ-butyrolactone and themethacryloyloxy-γ-butyrolactone having the lactone ring which may besubstituted with the alkyl group can be produced by reactingcorresponding α- or β-bromo-γ-butyrolactone with acrylic acid ormethacrylic acid, or reacting corresponding α- orβ-hydroxy-γ-butyrolactone with the acrylic halide or the methacrylichalide.

As monomers to give structural units represented by the formulae (1) and(2), specifically listed are, for example, an acrylate of alicycliclactones and a methacrylate of alicyclic lactones having the hydroxylgroup described below, and mixtures thereof. These esters can beproduced, for example, by reacting the corresponding alicyclic lactonehaving the hydroxyl group with acrylic acid or methacrylic acid, and theproduction method thereof is described in, for example, JP 2000-26446 A.

Examples of the acryloyloxy-γ-butyrolactone and themethacryloyloxy-γ-butyrolactone having the lactone ring which may besubstituted with the alkyl group include α-acryloyloxy-γ-butyrolactone,α-methacryloyloxy-γ-butyrolactone,α-acryloyloxy-β,β-dimethyl-γ-butyrolactone,α-methacryloyloxy-β,β-dimethyl-γ-butyrolactone,α-acryloyloxy-α-methyl-γ-butyrolactone,α-methacryloyloxy-α-methyl-γ-butyrolactone,β-acryloyloxy-γ-butyrolactone, β-methacryloyloxy-γ-butyrolactone andβ-methacryloyloxy-α-methyl-γ-butyrolactone.

The resin containing a structural unit derived from 2-norbornene showsstrong structure because the alicyclic group is directly present on itsmain chain and shows a property that dry etching resistance isexcellent. The structural unit derived from 2-norbornene can beintroduced into the main chain by radical polymerization using, forexample, an aliphatic unsaturated dicarboxylic anhydride such as maleicanhydride and itaconic anhydride together in addition to corresponding2-norbornene. The structural unit derived from 2-norbornene is formed byopening of its double bond, and can be represented by theabove-mentioned formula (3). The structural unit derived from maleicanhydride and from itaconic anhydride which are the structural unitderived from aliphatic unsaturated dicarboxylic anhydrides are formed byopening of their double bonds, and can be represented by theabove-mentioned formula (4) and the formula (5), respectively.

In R⁵ and R⁶, examples of the C1-C3 alkyl group include a methyl, ethyl,and n-propyl group, and examples of the C1-C3 hydroxyalkyl group includea hydroxymethyl and 2-hydroxyethyl group.

In R⁵ and R⁶, the —COOU group is an ester formed from the carboxylgroup, and as the alcohol residue corresponding to U, for example, anoptionally substituted C1-C8 alkyl group, 2-oxooxolan-3-yl group,2-oxooxolan-4-yl and the like are listed, and as the substituent on theC1-C8 alkyl group, a hydroxyl group, an alicyclic hydrocarbon residueand the like are listed.

Specific examples of the monomer used to give the structural unitrepresented by the above-mentioned formula (3) may include 2-norbornene,2-hydroxy-5-norbornene, 5-norbornene-2-carboxylic acid, methyl5-norbornene-2-carboxylate, 2-hydroxyethyl 5-norbornene-2-carboxylate,5-norbornene-2-methanol and 5-norbornene-2,3-dicarboxylic anhydride.

When U in the —COOU group is the acid-labile group, the structural unitrepresented by the formula (3) is a structural unit having theacid-labile group even if it has the norbornane structure. Examples ofmonomers giving structural unit having the acid-labile group includetert-butyl 5-norbornene-2-carboxylate, 1-cyclohexyl-1-methylethyl5-norbornene-2-carboxylate, 1-methylcyclohexyl5-norbornene-2-carboxylate, 2-methyl-2-adamantyl5-norbornene-2-carboxylate, 2-ethyl-2-adamantyl5-norbornene-2-carboxylate, 1-(4-methylcyclohexyl)-1-methylethyl5-norbornene-2-carboxylate, 1-(4-hydroxylcyclohexyl)-1-methylethyl5-norbornene-2-carboxylate, 1-methyl-1-(4-oxocyclohexyl)ethyl5-norbornene-2-carboxylate, 1-(1-adamantyl)-1-methylethyl5-norbornene-2-carboxylate, and the like.

The resin used in the present composition preferably contains thestructural unit or units having the acid-labile group generally in aratio of 10 to 80% by mole in all structural units of the resin thoughthe ratio varies depending on the kind of radiation for patterningexposure, the kind of the acid-labile group, and the like.

When the structural units particularly derived from the2-alkyl-2-adamantyl acrylate, the 2-alkyl-2-adamantyl methacrylate, the1-(1-adamantyl)-1-alkylalkyl acrylate or the1-(1-adamantyl)-1-alkylalkyl methacrylate are used as the structuralunit having the acid-labile group, it is advantageous in dry-etchingresistance of the resist that the ratio of the structural units is 15%by mole or more in all structural units of the resin.

When, in addition to structural units having the acid-labile group,other structural units having the acid-stable group are contained in theresin, it is preferable that the sum of these structural units is in therange of 20 to 90% by mole based on all structural units of the resin.

In the case of KrF lithography, even in the case of using a structureunit derived from hydroxystyrene such as p-hydroxystyrene andm-hydroxystyrene, as one of components of the resin, a resistcomposition having sufficient transparency can be obtained. Forobtaining such resins, the corresponding acrylic or methacrylic estermonomer can be radical-polymerized with acetoxystyrene and styrene, andthen the acetoxy group in the structural unit derived fromacetoxystyrene can be de-acetylated with an acid.

Specific examples of the structural unit derived from hydroxystyreneinclude the following structural units represented by the formulae (6)and (7).

The resin used for the present resist composition can be produced byconducting the polymerization reaction of the corresponding monomer ormonomers. The resin can be also produced by conducting theoligomerization reaction of the corresponding monomer or monomersfollowed by polymerizing the oligomer obtained.

The polymerization reaction is usually carried out in the presence of aradical initiator.

The radical initiator is not limited and examples thereof include an azocompound such as 2,2′-azobisisobutyronitrile,2,2′-azobis(2-methylbutyronitrile),1,1′-azobis(cyclohexane-1-carbonitrile),2,2′-azobis(2,4-dimethylvaleronitrile),2,2′-azobis(2,4-dimethyl-4-methoxyvaleronitrile),dimethyl-2,2′-azobis(2-methylpropionate) and2,2′-azobis(2-hydroxymethylpropionitrile); an organic hydroperoxide suchas lauroyl peroxide, tert-butyl hydroperoxide, benzoyl peroxide,tert-butyl peroxybenzoate, cumene hydroperoxide, diisopropylperoxydicarbonate, di-n-propyl peroxydicarbonate, tert-butylperoxyneodecanoate, tert-butyl peroxypivalate and3,5,5-trimethylhexanoyl peroxide; and an inorganic peroxide such aspotassium peroxodisulfate, ammonium peroxodisulfate and hydrogenperoxide. Among them, the azo compound is preferable and2,2′-azobisisobutyronitrile, 2,2′-azobis(2-methylbutyronitrile),1,1′-azobis(cyclohexane-1-carbonitrile),2,2′-azobis(2,4-dimethylvaleronitrile) anddimethyl-2,2′-azobis(2-methylpropionate) are more preferable, and2,2′-azobisisobutyronitrile and 2,2′-azobis(2,4-dimethylvaleronitrile)are especially preferable.

These radical initiators may be used alone or in a form of a mixture oftwo or more kinds thereof. When the mixture of two or more kinds thereofis used, the mixed ratio is not particularly limited.

The amount of the radical initiator is preferably 1 to 20% by mole basedon all monomer or oligomer molar amount.

The polymerization temperature is usually 0 to 150° C., and preferably40 to 100° C.

The polymerization reaction is usually carried out in the presence of asolvent and it is preferred to use a solvent which is sufficient todissolve the monomer, the radical initiator and the resin obtained.Examples thereof include a hydrocarbon solvent such as toluene; an ethersolvent such as 1,4-dioxane and tetrahydrofuran; a ketone solvent suchas methyl isobutyl ketone; an alcohol solvent such as isopropyl alcohol;a cyclic ester solvent such as γ-butyrolactone; a glycol ether esterester solvent such as propylene glycol monomethyl ether acetate; and anacyclic ester solvent such as ethyl lactate. These solvents may be usedalone and a mixture thereof may be used.

The amount of the solvent is not limited, and practically, it ispreferably 1 to 5 parts by weight relative to 1 part of all monomers oroligomers.

When an alicyclic compound having an olefinic double bond and analiphatic unsaturated dicarboxylic anhydride are used as monomers, it ispreferable to use them in excess amount in view of a tendency that theseare not easily polymerized.

After completion of the polymerization reaction, the resin produced canbe isolated, for example, by adding a solvent in which the present resinis insoluble or poorly soluble to the reaction mixture obtained andfiltering the precipitated resin. If necessary, the isolated resin maybe purified, for example, by washing with a suitable solvent.

The present resist composition preferably includes 80 to 99.9% by weightof the resin component and 0.1 to 20% by weight of sum of Salt (I) andSalt (II) based on the total amount of the resin component, Salt (I) andSalt (II).

The amount ratio of Salt (I) and Salt (II) is usually 9/1 to 1/9,preferably 9/1 to 3/7, and more preferably 9/1 to 4/6.

In the present resist composition, performance deterioration caused byinactivation of acid which occurs due to post exposure delay can bediminished by adding an organic base compound, particularly anitrogen-containing organic base compound as a quencher.

Specific examples of the nitrogen-containing organic base compoundinclude an amine compound represented by the following formulae:

wherein R¹¹ and R¹² independently represent a hydrogen atom, an alkylgroup, a cycloalkyl group or an aryl group, and the alkyl, cycloalkyland aryl group may be substituted with at least one group selected froma hydroxyl group, an amino group which may be substituted with a C1-C4alkyl group and a C1-C6 alkoxy group which may be substituted with aC1-C6 alkoxy group,R¹³ and R¹⁴ independently represent a hydrogen atom, an alkyl group, acycloalkyl group, an aryl group or an alkoxy group, and the alkyl,cycloalkyl, aryl and alkoxy group may be substituted with at least onegroup selected from a hydroxyl group, an amino group which may besubstituted with a C1-C4 alkyl group and a C1-C6 alkoxy group, orR¹³ and R¹⁴ bond together with the carbon atoms to which they bond toform an aromatic ring,R¹⁵ represent a hydrogen atom, an alkyl group, a cycloalkyl group, anaryl group, an alkoxy group or a nitro group, and the alkyl, cycloalkyl,aryl and alkoxy group which may be substituted with at least one groupselected from a hydroxyl group, an amino group which may be substitutedwith a C1-C4 alkyl group and a C1-C6 alkoxy group,R¹⁶ represents an alkyl or cycloalkyl group, and the alkyl andcycloalkyl group may be substituted with at least one group selectedfrom a hydroxyl group, an amino group which may be substituted with aC1-C4 alkyl group and a C1-C6 alkoxy group, andW represents —CO—, —NH—, —S—, —S—S—, an alkylene group of which at leastone methylene group may be replaced with —O—, or an alkenylene group ofwhich at least one methylene group may be replaced with —O—, and aquaternary ammonium hydroxide represented by the following formula:

wherein R¹⁷, R¹⁸, R¹⁹ and R²⁰ independently represent an alkyl group, acycloalkyl group or an aryl group, and the alkyl, cycloalkyl and arylgroup may be substituted with at least one group selected from ahydroxyl group, an amino group which may be substituted with a C1-C4alkyl group and a C1-C6 alkoxy group.

The alkyl group in R¹¹, R¹², R¹³, R¹⁴, R¹⁵, R¹⁶, R¹⁷, R¹⁸, R¹⁹ and R²⁰preferably has about 1 to 10 carbon atoms, and more preferably has about1 to 6 carbon atoms.

Examples of the amino group which may be substituted with the C1-C4alkyl group include an amino, methylamino, ethylamino, n-butylamino,dimethylamino and diethylamino group. Examples of the C1-C6 alkoxy groupwhich may be substituted with the C1-C6 alkoxy group include a methoxy,ethoxy, n-propoxy, isopropoxy, n-butoxy, tert-butoxy, n-pentyloxy,n-hexyloxy and 2-methoxyethoxy group.

Specific examples of the alkyl group which may be substituted with atleast one group selected from a hydroxyl group, an amino group which maybe substituted with a C1-C4 alkyl group, and a C1-C6 alkoxy group whichmay be substituted with a C1-C6 alkoxy group include a methyl, ethyl,n-propyl, isopropyl, n-butyl, tert-butyl, n-pentyl, n-hexyl, n-octyl,n-nonyl, n-decyl, 2-(2-methoxyethoxy)ethyl, 2-hydroxyethyl,2-hydroxypropyl, 2-aminoethyl, 4-aminobutyl and 6-aminohexyl group.

The cycloalkyl group in R¹¹, R¹², R¹³, R¹⁴, R¹⁵, R¹⁶, R¹⁷, R¹⁸, R¹⁹ andR²⁰ preferably has about 5 to 10 carbon atoms. Specific examples of thecycloalkyl group which may be substituted with at least one groupselected from a hydroxyl group, an amino group which may be substitutedwith a C1-C4 alkyl group and a C1-C6 alkoxy group include a cyclopentyl,cyclohexyl, cycloheptyl and cyclooctyl group.

The aryl group in R¹¹, R¹², R¹³, R¹⁴, R¹⁵, R¹⁷, R¹⁸, R¹⁹ and R²⁰preferably has about 6 to 10 carbon atoms. Specific examples of the arylgroup which may be substituted with at least one group selected from ahydroxyl group, an amino group which may be substituted with a C1-C4alkyl group and a C1-C6 alkoxy group include a phenyl and naphthylgroup.

The alkoxy group in R¹³, R¹⁴ and R¹⁵ preferably has about 1 to 6 carbonatoms and specific examples thereof include a methoxy, ethoxy,n-propoxy, isopropoxy, n-butoxy, tert-butoxy, n-pentyloxy and n-hexyloxygroup.

The alkylene and alkenylene groups in W preferably have 2 to 6 carbonatoms. Specific examples of the alkylene group include an ethylene,trimethylene, tetramethylene, methylenedioxy and ethylene-1,2-dioxygroup, and specific examples of the alkenylene group include anethene-1,2-diyl, 1-propene-1,3-diyl and 2-butene-1,4-diyl group.

Specific examples of the amine compound include n-hexylamine,n-heptylamine, n-octylamine, n-nonylamine, n-decylamine, aniline,2-methylaniline, 3-methylaniline, 4-methylaniline, 4-nitroaniline,1-naphthylamine, 2-naphthylamine, ethylenediamine,tetramethylenediamine, hexamethylenediamine,4,4′-diamino-1,2-diphenylethane,4,4′-diamino-3,3′-dimethyldiphenylmethane,4,4′-diamino-3,3′-diethyldiphenylmethane, dibutylamine, dipentylamine,dihexylamine, diheptyamine, dioctylamine, dinonylamine, didecylamine,N-methylaniline, piperidine, diphenylamine, triethylamine,trimethylamine, tripropylamine, tributylamine, tripentylamine,trihexylamine, triheptylamine, trioctylamine, trinonylamine,tridecylamine, methyldibutylamine, methyldipentylamine,methyldihexylamine, methyldicyclohexylamine, methyldiheptylamine,methyldioctylamine, methyldinonylamine, methyldidecylamine,ethyldibutylamine, ethyldipentylamine, ethyldihexylamine,ethyldiheptylamine, ethyldioctylamine, ethyldinonylamine,ethyldidecyamine, dicyclohexylmethylamine,tris[2-(2-methoxyethoxy)ethyl]amine, triisopropanolamine,N,N-dimethylaniline, 2,6-diisopropylaniline, imidazole, benzimidazole,pyridine, 4-methylpyridine, 4-methylimidazole, bipyridine,2,2′-dipyridylamine, di-2-pyridyl ketone, 1,2-di(2-pyridyl)ethane,1,2-di(4-pyridyl)ethane, 1,3-di(4-pyridyl)propane,1,2-bis(2-pyridyl)ethylene, 1,2-bis(4-pyridyl)ethylene,1,2-bis(4-pyridyloxy)ethane, 4,4′-dipyridyl sulfide, 4,4′-dipyridyldisulfide, 1,2-bis(4-pyridyl)ethylene, 2,2′-dipicolylamine and3,3′-dipicolylamine.

Examples of the quaternary ammonium hydroxide includetetramethylammonium hydroxide, tetrabutylammonium hydroxide,tetrahexylammonium hydroxide, tetraoctylammonium hydroxide,phenyltrimethylammonium hydroxide,(3-trifluoromethylphenyl)trimethylammonium hydroxide and(2-hydroxyethyl)trimethylammonium hydroxide (so-called “choline”).

A hindered amine compound having a piperidine skeleton as disclosed inJP 11-52575 A1 can be also used as the quencher.

In the point of forming patterns having higher resolution, thequaternary ammonium hydroxide is preferably used as the quencher.

When the basic compound is used as the quencher, the present resistcomposition preferably includes 0.01 to 1% by weight of the basiccompound based on the total amount of the resin component, Salt (I) andSalt (II).

The present resist composition can contain, if necessary, a small amountof various additives such as a sensitizer, a dissolution inhibitor,other polymers, a surfactant, a stabilizer and a dye as long as theeffect of the present invention is not prevented.

The present resist composition is usually in the form of a resist liquidcomposition in which the above-mentioned ingredients are dissolved in asolvent and the resist liquid composition is applied onto a substratesuch as a silicon wafer by a conventional process such as spin coating.The solvent used is sufficient to dissolve the above-mentionedingredients, have an adequate drying rate, and give a uniform and smoothcoat after evaporation of the solvent. Solvents generally used in theart can be used.

Examples of the solvent include a glycol ether ester such as ethylcellosolve acetate, methyl cellosolve acetate and propylene glycolmonomethyl ether acetate; an acyclic ester such as ethyl lactate, butylacetate, amyl acetate and ethyl pyruvate; a ketone such as acetone,methyl isobutyl ketone, 2-heptanone and cyclohexanone; and a cyclicester such as γ-butyrolactone. These solvents may be used alone and twoor more thereof may be mixed to use.

A resist film applied onto the substrate and then dried is subjected toexposure for patterning, then heat-treated to facilitate a deblockingreaction, and thereafter developed with an alkali developer. The alkalideveloper used may be any one of various alkaline aqueous solution usedin the art. Generally, an aqueous solution of tetramethylammoniumhydroxide or (2-hydroxyethyl)trimethylammonium hydroxide (commonly knownas “choline”) is often used.

It should be construed that embodiments disclosed here are examples inall aspects and not restrictive. It is intended that the scope of thepresent invention is determined not by the above descriptions but byappended claims, and includes all variations of the equivalent meaningsand ranges to the claims.

The present invention will be described more specifically by way ofexamples, which are not construed to limit the scope of the presentinvention. The “%” and “part(s)” used to represent the content of anycomponent and the amount of any material used in the following examplesand comparative examples are on a weight basis unless otherwisespecifically noted. The weight-average molecular weight of any materialused in the following examples is a value found by gel permeationchromatography [HLC-8120GPC Type, Column (Three Columns): TSKgelMultipore HXL-M, Solvent: Tetrahydrofuran, manufactured by TOSOHCORPORATION] using styrene as a standard reference material. Structuresof compounds were determined by NMR (GX-270 Type, or EX-270 Type,manufactured by JEOL LTD) and mass spectrometry (Liquid Chromatography:1100 Type, manufactured by AGILENT TECHNOLOGIES LTD., Mass Spectrometry:LC/MSD Type or LC/MSD TOF Type, manufactured by AGILENT TECHNOLOGIESLTD.).

Salt Synthetic Example 1

(1) 230 Parts of 30% aqueous sodium hydroxide solution was added into amixture of 100 parts of methyl difluoro(fluorosulfonyl)acetate and 250parts of ion-exchanged water in a ice bath. The resultant mixture washeated and refluxed at 100° C. for 3 hours. After cooling, the cooledmixture was neutralized with 88 parts of conc. hydrochloric acid and thesolution obtained was concentrated to obtain 164.8 parts of sodium saltof difluorosulfoacetic acid (containing inorganic salt, purity: 62.8%).(2) 5.0 Parts of sodium difluorosulfoacetate (purity: 62.8%), 2.6 partsof 4-oxo-1-adamantanol and 100 parts of ethylbenzene were mixed and 0.8parts of conc. sulfuric acid was added thereto. The resultant mixturewas refluxed for 30 hours. After cooling, the mixture was filtrated toobtain solids, and the solids were washed with tert-butyl methyl etherto obtain 5.5 parts of the salt represented by the above-mentionedformula (a). The purity thereof was 35.6%, which was calculated by theresult of ¹H-NMR analysis.

¹H-NMR (dimethylsulfoxide-d₆, Internal Standard: tetramethylsilane): d(ppm) 1.84 (d, 2H, J=13.0 Hz), 2.00 (d, 2H, J=11.9 Hz), 2.29-2.32 (m,7H), 2.54 (s, 2H)

(3) To 5.4 Parts of the salt represented by the formula (a), which wasobtained in (2) (purity: 35.6%), a mixed solvent of 16 parts ofacetonitrile and 16 parts of ion-exchanged water was added. To theresultant mixture, a solution prepared by mixing 1.7 parts oftriphenylsulfonium chloride, 5 parts of acetonitrile and 5 parts ofion-exchanged water was added. After stirred for 15 hours, the mixtureobtained was concentrated and extracted with 142 parts of chloroform.The organic layer obtained was washed with ion-exchanged water andconcentrated. The concentrate obtained was washed with 24 parts oftert-butyl methyl ether and the solvent was decanted to remove to obtain1.7 parts of the salt represented by the above-mentioned formula (b) inthe form of white solid, which is called as B1.

¹H-NMR (dimethylsulfoxide-d₆, Internal Standard: tetramethylsilane): d(ppm) 1.83 (d, 2H, J=12.7 Hz), 2.00 (d, 2H, J=12.0 Hz), 2.29-2.32 (m,7H), 2.53 (s, 2H), 7.75-7.91 (m, 15H)

MS (ESI(+) Spectrum): M+ 263.2 (C₁₈H₁₅S⁺=263.09)

MS (ESI(−) Spectrum): M− 323.0 (C₁₂H₁₃F₂O₆S⁻=323.04)

Salt Synthetic Example 2

(1) 230 Parts of 30% aqueous sodium hydroxide solution was added into amixture of 100 parts of methyl difluoro(fluorosulfonyl)acetate and 150parts of ion-exchanged water in a ice bath. The resultant mixture washeated and refluxed at 100° C. for 3 hours. After cooling, the cooledmixture was neutralized with 88 parts of conc. hydrochloric acid and thesolution obtained was concentrated to obtain 164.4 parts of sodium saltof difluorosulfoacetic acid (containing inorganic salt, purity: 62.7%).(2) 1.9 Parts of sodium salt of difluorosulfoacetic acid (purity:62.7%), 9.5 parts of N,N-dimethylformamide and 1.0 part of1,1′-carbonyldiimidazole were mixed and the resultant solution wasstirred for 2 hours. The solution was added to the solution prepared bymixing 1.1 parts of the compound represented by the above-mentionedformula (c), 5.5 parts of N,N-dimethylformamide and 0.2 part of sodiumhydride and stirring for 2 hours. The resultant solution was stirred for15 hours to obtain the solution containing the salt represented by theabove-mentioned formula (d).(3) To the solution containing the salt represented by theabove-mentioned formula (d), 17.2 parts of chloroform and 2.9 parts ofaqueous triphenylsulfonium chloride solution were added. The resultantmixture was stirred for 15 hours, and then separated to an organic layerand an aqueous layer. The aqueous layer was extracted with 6.5 parts ofchloroform to obtain a chloroform layer. The chloroform layer and theorganic layer were mixed and washed with ion-exchanged water. Theorganic layer obtained was concentrated. The residue obtained was mixedwith 5.0 parts of tert-butyl methyl ether and the mixture obtained wasfiltrated to obtain 0.2 part of the salt represented by theabove-mentioned formula (e) in the form of a white solid, which iscalled as B2.

¹H-NMR (dimethylsulfoxide-d₆, Internal Standard: tetramethylsilane): d(ppm) 1.38-1.51 (m, 12H), 2.07 (s, 2H), 3.85 (s, 2H), 4.41 (s, 1H),7.75-7.89 (m, 15H)

MS (ESI(+) Spectrum): M+ 263.07 (C₁₈H₁₅S⁺=263.09)

MS (ESI(−) Spectrum): M− 339.10 (C₁₃H₁₇F₂O₆S⁻=339.07)

Resin Synthetic Example 1

Monomers used in this Resin Synthetic Example are following monomers M1,M2 and M3.

The monomer M1, monomer M2 and monomer M3 were dissolved in 2 timesamount of methyl isobutyl ketone as much as the amount of all monomersto be used (monomer molar ratio; monomer M1: monomer M2: monomerM3=5:2.5:2.5). To the solution, 2,2′-azobisisobutyronitrile was added asan initiator in a ratio of 2 mol % based on all monomer molar amount,and the resultant mixture was heated at 80° C. for about 8 hours. Thereaction solution was poured into large amount of heptane to causeprecipitation. The precipitate was isolated and washed twice with largeamount of heptane for purification. As a result, copolymer having aweight-average molecular weight of about 9,200 was obtained. Thiscopolymer had the following structural units. This is called as resinA1.

Resin Synthetic Example 2

Monomers used in this Resin Synthetic Example are following monomers M1,M2 and M4.

The monomer M1, monomer M2 and monomer M4 were dissolved in 1.28 timesamount of 1,4-dioxane as much as the amount of all monomers to be used(monomer molar ratio; monomer M1: monomer M2: monomer M4=50:25:25). Tothe solution, 2,2′-azobisisobutyronitrile was added as an initiator in aratio of 3 mol % based on all monomer molar amount. The solutionobtained was added to 0.72 times amount of 1,4-dioxane as much as theamount of all monomers to be used at 88° C. for 2 hours. The resultantmixture was stirred at the same temperature for 5 hours. The reactionsolution was cooled and then, was poured into large amount of a mixedsolvent of methanol and water to cause precipitation. The precipitatewas isolated and washed twice with large amount of methanol forpurification. As a result, copolymer having a weight-average molecularweight of about 8,500 was obtained. This copolymer had the followingstructural units. This is called as resin A2.

Examples 1 to 4 and Comparative Examples 1 to 3 Acid Generator AcidGenerator B1:

Acid Generator B2:

Acid Generator C1:

Acid Generator C2:

Acid Generator C3:

<Resin> Resins A1 and A2 <Quencher>

Q1: 2,6-diisopropylaniline

<Solvent>

Y1: propylene glycol monomethyl ether acetate 145 parts 2-heptanone 20.0parts propylene glycol monomethyl ether 20.0 parts γ-butyrolactone 3.5parts

The following components were mixed and dissolved, further, filtratedthrough a fluorine resin filter having pore diameter of 0.2 μm, toprepare resist liquid.

Resin (kind and amount are described in Table 1)

Acid generator (kind and amount are described in Table 1)

Quencher (kind and amount are described in Table 1)

Solvent (kind is described in Table 1)

Silicon wafers were each coated with “ARC-29A”, which is an organicanti-reflective coating composition available from Nissan ChemicalIndustries, Ltd., and then baked under the conditions: 205° C., 60seconds, to form a 780 Å-thick organic anti-reflective coating. Each ofthe resist liquids prepared as above was spin-coated over theanti-reflective coating so that the thickness of the resulting filmbecame 0.15 μm after drying. The silicon wafers thus coated with therespective resist liquids were each prebaked on a direct hotplate at atemperature shown in column of “PB” of Table 1 for 60 seconds. Using anArF excimer stepper (“FPA-5000AS3” manufactured by CANON INC., NA=0.75,2/3 Annular), each wafer thus formed with the respective resist film wassubjected to line and space pattern exposure, with the exposure quantitybeing varied stepwise.

After the exposure, each wafer was subjected to post-exposure baking ona hotplate at a temperature shown in column of “PEB” of Table 1 for 60seconds and then to paddle development for 60 seconds with an aqueoussolution of 2.38 wt % tetramethylammonium hydroxide.

Each of a dark field pattern developed on the organic anti-reflectivecoating substrate after the development was observed with a scanningelectron microscope, the results of which are shown in Table 2. The term“dark field pattern”, as used herein, means a pattern obtained byexposure and development through a reticle comprising chromium basesurface (light-shielding portion) and linear glass layers(light-transmitting portion) formed in the chromium surface and alignedwith each other. Thus, the dark field pattern is such that, afterexposure and development, resist layer surrounding the line and spacepattern remains on substrate.

Effective Sensitivity (ES): It is expressed as the amount of exposurethat the line pattern and the space pattern become 1:1 after exposurethrough 100 nm line and space pattern mask and development.

Line Edge Roughness (LER): Each of a wall surface of pattern developedon the organic anti-reflective coating substrate after the developmentwas observed with a scanning electron microscope. When the wall surfaceis as same as that of Comparative Example 1, its evaluation is marked by“Δ”, when the wall surface is smoother than that of Comparative Example1, its evaluation is marked by “◯”, and when the wall surface is rougherthan that of Comparative Example 1, its evaluation is marked by “X”.

TABLE 1 Resin Acid Quencher (kind/ generator (kind/ Ex. amount(kind/amount amount PB PEB No. (part)) (part)) (part)) Solvent (° C.) (°C.) Ex. 1 A1/10 B1/0.40 Q1/0.065 Y1 115 115 C1/0.08 Ex. 2 A1/10 B1/0.40Q1/0.065 Y1 115 115 C2/0.10 Ex. 3 A1/10 B1/0.25 Q1/0.065 Y1 115 115C3/0.25 Ex. 4 A1/10 B2/0.40 Q1/0.065 Y1 115 115 C2/0.10 Comp. A1/10B1/0.50 Q1/0.065 Y1 115 115 Ex. 1 Comp. A1/10 C2/0.50 Q1/0.065 Y1 115115 Ex. 2 Comp. A2/10 B1/0.50 Q1/0.065 Y1 120 120 Ex. 3

TABLE 2 Ex. No. ES (mJ/cm²) Resolution (nm) LER Ex. 1 28 90 ◯ Ex. 2 3190 ◯ Ex. 3 31 90 ◯ Ex. 4 35 90 ◯ Comp. 37 90 — Ex. 1 Comp. 28 95 X Ex. 2Comp. 37 90 X Ex. 3

Apparent from Table 2, the resist compositions of Examples, which accordto the present invention, give good resist pattern in resolution and insmoothness of wall surface.

The present composition provides good resist pattern in resolution andline edge roughness and is especially suitable for ArF excimer laserlithography, KrF excimer laser lithography and ArF immersionlithography.

1. A chemically amplified resist composition comprising: (A) a saltrepresented by the formula (1):

wherein R²¹ represents a C1-C30 hydrocarbon group which may besubstituted, and at least one —CH₂— in the hydrocarbon group may besubstituted by —CO— or —O—, Q¹ and Q² each independently represent afluorine atom or a C1-C6 perfluoroalkyl group, and A⁺ represents atleast one organic cation selected from a cation represented by theformula (Ia):

wherein P¹, P² and P³ each independently represent a C1-C30 alkyl groupwhich may be substituted with at least one selected from a hydroxylgroup, a C3-C12 cyclic hydrocarbon group and a C1-C12 alkoxy group, or aC3-C30 cyclic hydrocarbon group which may be substituted with at leastone selected from a hydroxyl group and a C1-C12 alkoxy group, a cationrepresented by the formula (Ib):

wherein P⁴ and P⁵ each independently represent a hydrogen atom, ahydroxyl group, a C1-C12 alkyl group or a C1-C12 alkoxy group, and acation represented by the formula (Ic):

wherein P¹⁰, P¹¹, P¹², P¹³, P¹⁴, P¹⁵, P¹⁶, P¹⁷, P¹⁸, P¹⁹, P²⁰ and P²¹each independently represent a hydrogen atom, a hydroxyl group, a C1-C12alkyl group or a C1-C12 alkoxy group, B represents a sulfur or oxygenatom and m represents 0 or 1, (B) a salt represented by the formula(II):A′⁺⁻E  (II) wherein A′⁺ represents at least one organic cation selectedfrom cations represented by the above-mentioned formulae (Ia), (Ib) and(Ic), and E⁻ represents at least one organic anion selected from ananion represented by the formula (II-1):⁻O₃SQ³  (II-1) wherein Q³ represents a C1-C10 perfluoroalkyl group, andan anion represented by the formula (II-2):

wherein Q⁴ represents a C1-C10 perfluoroalkyl group, and (C) a resinwhich contains a structural unit having an acid-labile group and whichitself is insoluble or poorly soluble in an aqueous alkali solution butbecomes soluble in an aqueous alkali solution by the action of an acid.2. The chemically amplified resist composition according to claim 1,wherein Q¹ and Q² each independently represent a fluorine atom or atrifluoromethyl group.
 3. The chemically amplified resist compositionaccording to claim 1, wherein Q¹ and Q² represent fluorine atoms.
 4. Thechemically amplified resist composition according to claim 1, wherein Q³represents a trifluoromethyl group, a pentafluoroethyl group, or anonafluorobutyl group.
 5. The chemically amplified resist compositionaccording to claim 1, wherein Q⁴ represents a trifluoromethyl group or apentafluoroethyl group.
 6. The chemically amplified resist compositionaccording to claim 1, wherein E⁻ is an anion represented by the formula(II-1).
 7. The chemically amplified resist composition according toclaim 1, wherein A⁺ and A′⁺ are the same or different, and eachindependently represents a cation represented by the formula (Id), (Ie)or (If):

wherein P²⁸, P²⁹ and P³⁰ each independently represent a C1-C20 alkylgroup or a C3-C30 cyclic hydrocarbon group except a phenyl group, and atleast one hydrogen atom in the C1-C20 alkyl group may be substitutedwith a hydroxyl group, a C1-C12 alkoxy group or a C3-C12 cyclichydrocarbon group and at least one hydrogen atom in the C3-C30 cyclichydrocarbon group may be substituted with a hydroxyl group, a C1-C12alkyl group or a C1-C12 alkoxy group, and P³¹, P³², P³³, P³⁴, P³⁵ andP³⁶ each independently represent a hydroxyl group, a C1-C12 alkyl group,a C1-C12 alkoxy group or a C3-C12 cyclic hydrocarbon group, and l, k, j,i, h and g each independently represent an integer of 0 to
 5. 8. Thechemically amplified resist composition according to claim 1, wherein A⁺and A′⁺ are the same or different, and each independently represents acation represented by the formula (Ig):

wherein P⁴¹, P⁴² and P⁴³ each independently represent a hydrogen atom, ahydroxyl group, a C1-C12 alkyl group or a C1-C12 alkoxy group.
 9. Thechemically amplified resist composition according to claim 1, wherein A⁺and A′⁺ are the same or different, and each independently represents acation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group.
 10. The chemically amplified resist compositionaccording to claim 1, wherein R²¹ represents a group represented by theformula:

wherein Z¹ represents a single bond or —(CH₂)_(f)—, f represents aninteger of 1 to 4, Y¹ represents —CH₂—, —CO— or —CH(OH)—; ring X¹represents a C3-C30 monocyclic or polycyclic hydrocarbon group in whicha hydrogen atom is substituted with a hydroxyl group at Y¹ position whenY¹ is —CH(OH)— or in which two hydrogen atoms are substituted with ═O atY¹ position when Y¹ is —CO—, and at least one hydrogen atom in theC3-C30 monocyclic or polycyclic hydrocarbon group may be substitutedwith a C1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C4 perfluoroalkylgroup, a C1-C6 hydroxyalkyl group, a hydroxyl group or a cyano group.11. The chemically amplified resist composition according to claim 10,wherein the group represented by the formula:

is a group represented by the formula (l), (m) or (n):


12. The chemically amplified resist composition according to claim 1,wherein A⁺ is a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group, and R²¹ represents a group represented by theformula:

wherein Z¹ represents a single bond or —(CH₂)_(f)—, f represents aninteger of 1 to 4, Y¹ represents —CH₂—, —CO— or —CH(OH)—; ring X¹represents a C3-C30 monocyclic or polycyclic hydrocarbon group in whicha hydrogen atom is substituted with a hydroxyl group at Y¹ position whenY¹ is —CH(OH)— or in which two hydrogen atoms are substituted with ═O atY¹ position when Y is —CO—, and at least one hydrogen atom in the C3-C30monocyclic or polycyclic hydrocarbon group may be substituted with aC1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C4 perfluoroalkyl group, aC1-C6 hydroxyalkyl group, a hydroxyl group or a cyano group.
 13. Thechemically amplified resist composition according to claim 12, whereinthe group represented by the formula:

is a group represented by the formula (l), (m) or (n):


14. The chemically amplified resist composition according to claim 1,wherein A′⁺ is a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group, and E⁻ is an anion represented by the formula(II-1):⁻O₃SQ³  (II-1) wherein Q³ represents a C1-C10 perfluoroalkyl group. 15.The chemically amplified resist composition according to claim 1,wherein A⁺ and A′⁺ are same or different, and each independentlyrepresents a cation represented by the formula (Ih):

wherein P²², P²³ and P²⁴ each independently represent a hydrogen atom ora C1-C4 alkyl group, R²¹ represents a group represented by the formula:

wherein Z represents a single bond or —(CH₂)_(f)—, f represents aninteger of 1 to 4, Y¹ represents —CH₂—, —CO— or —CH(OH)—; ring X¹represents a C3-C30 monocyclic or polycyclic hydrocarbon group in whicha hydrogen atom is substituted with a hydroxyl group at Y¹ position whenY¹ is —CH(OH)— or in which two hydrogen atoms are substituted with ═O atY¹ position when Y is —CO—, and at least one hydrogen atom in the C3-C30monocyclic or polycyclic hydrocarbon group may be substituted with aC1-C6 alkyl group, a C1-C6 alkoxy group, a C1-C4 perfluoroalkyl group, aC1-C6 hydroxyalkyl group, a hydroxyl group or a cyano group, and E⁻ isan anion represented by the formula (II-1):⁻O₃SQ³  (II-1) wherein Q³ represents a C1-C10 perfluoroalkyl group. 16.The chemically amplified resist composition according to claim 1,wherein the amount ratio of the salt represented by the formula (1) andthe salt represented by the formula (II) is 9/1 to 1/9.
 17. Thechemically amplified resist composition according to claim 1, whereinthe resin contains a structural unit derived from a monomer having abulky and acid-labile group.
 18. The resist composition according toclaim 18, the bulky and acid-labile group is a 2-alkyl-2-adamantyl estergroup or a 1-(1-adamantyl)-1-alkylalkyl ester group.
 19. The resistcomposition according to claim 18, the monomer having a bulky andacid-labile group is 2-alkyl-2-adamantyl acrylate, 2-alkyl-2-adamantylmethacrylate, 1-(1-adamantyl)-1-alkylalkyl acrylate,1-(1-adamantyl)-1-alkylalkyl methacrylate, 2-alkyl-2-adamantyl5-norbornene-2-carboxylate, 1-(1-adamantyl)-1-alkylalkyl5-norbornene-2-carboxylate, 2-alkyl-2-adamantyl α-chloroacrylate or1-(1-adamantyl)-1-alkylalkyl α-chloroacrylate.
 20. The resistcomposition according to claim 1, wherein the resist composition furthercomprises a basic compound.